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M81721FP - HIGH VOLTAGE HALF BRIDGE DRIVER

General Description

M81721FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications.

Key Features

  • ¡Floating supply voltage up to 600V ¡Low quiescent power supply current ¡Separate sink and source current output up to ±1A (typ) ¡Active Miller effect clamp NMOS with sink current up to.
  • 1A (typ) ¡Input noise filters ¡Over-current detection and output shutdown ¡High side under voltage lockout ¡FO pin which can input and output Fault signals to communicate with controllers and synchronize the shut down with other phases ¡24-Lead SSOP.

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MITSUBISHI SEMICONDUCTORS M81721FP 600V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81721FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications.