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MGF4941CL - Micro-X type plastic package

General Description

The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

The MGF4941CL is designed for automotive application and AEC-Q101 qualified.

Key Features

  • Low noise figure @ f=25.2GHz NFmin. = 2.4dB (Typ. ) High associated gain @ f=25.2GHz Gs = 10.0dB (Typ. ) Fig.1.

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Full PDF Text Transcription for MGF4941CL (Reference)

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< Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for u...

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oise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101 qualified. Outline Drawing FEATURES Low noise figure @ f=25.2GHz NFmin. = 2.4dB (Typ.) High associated gain @ f=25.2GHz Gs = 10.0dB (Typ.) Fig.1 APPLICATION K band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=1.5V, VGS=0V ORDERRING INFORMATION Tape & reel 4000pcs./reel www.DataSheet.net/ RoHS COMPLIANT MGF4941CL is a RoHS compliant product.

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