Datasheet4U Logo Datasheet4U.com

MGFC42V7177 - C band Internally Matched Power GaAs FET

Description

The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1

7.7 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Crass A operation Internally matched to 50(ohm).
  • High output power: P1dB = 16 W (typ. ) @ P1dB.
  • High power gain: GLP = 8.0 dB (typ. ).
  • High power added efficiency: PAE = 30 % (typ. ).

📥 Download Datasheet

Datasheet preview – MGFC42V7177

Datasheet Details

Part number MGFC42V7177
Manufacturer Mitsubishi Electric Semiconductor
File Size 160.60 KB
Description C band Internally Matched Power GaAs FET
Datasheet download datasheet MGFC42V7177 Datasheet
Additional preview pages of the MGFC42V7177 datasheet.

📁 Similar Datasheet

  • MGFC42V7785A - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC42V3436 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC42V3742 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC42V3742A - 3.7- 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET (Mitsubishi)
  • MGFC42V4450 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC42V4450A - 4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET (Mitsubishi)
  • MGFC42V5258 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC42V5867 - 16W INTERNALLHY MATCHED GaAs FET (Mitsubishi Electric)
  • MGFC42V5964 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC42V5964A - C band internally matched power GaAs FET (Mitsubishi Electric)
Other Datasheets by Mitsubishi Electric Semiconductor

Full PDF Text Transcription

Click to expand full text
MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Crass A operation Internally matched to 50(ohm)  High output power: P1dB = 16 W (typ.) @ P1dB  High power gain: GLP = 8.0 dB (typ.)  High power added efficiency: PAE = 30 % (typ.) APPLICATIONS  item 01 : 7.1 – 7.7GHz band power amplifier  item 51 : 7.1 – 7.7GHz band digital radio communication QUALITY  IG RECOMMENDED BIAS CONDITIONS  Vds = 10 V  Ids = 4.5 A  Rg = 25  www.DataSheet.
Published: |