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MGFC42V7177 - C band Internally Matched Power GaAs FET

General Description

The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1

7.7 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Crass A operation Internally matched to 50(ohm).
  • High output power: P1dB = 16 W (typ. ) @ P1dB.
  • High power gain: GLP = 8.0 dB (typ. ).
  • High power added efficiency: PAE = 30 % (typ. ).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Crass A operation Internally matched to 50(ohm)  High output power: P1dB = 16 W (typ.) @ P1dB  High power gain: GLP = 8.0 dB (typ.)  High power added efficiency: PAE = 30 % (typ.) APPLICATIONS  item 01 : 7.1 – 7.7GHz band power amplifier  item 51 : 7.1 – 7.7GHz band digital radio communication QUALITY  IG RECOMMENDED BIAS CONDITIONS  Vds = 10 V  Ids = 4.5 A  Rg = 25  www.DataSheet.