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MGFC42V7177 Datasheet C Band Internally Matched Power Gaas Fet

Manufacturer: Mitsubishi Electric

Overview: MGFC42V7177 7.1 - 7.

General Description

The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Crass A operation Internally matched to 50(ohm).
  • High output power: P1dB = 16 W (typ. ) @ P1dB.
  • High power gain: GLP = 8.0 dB (typ. ).
  • High power added efficiency: PAE = 30 % (typ. ).

MGFC42V7177 Distributor