MGFC42V7177
Description
The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 - 7.7 GHz band amplifiers.
Key Features
- Crass A operation Internally matched to 50(ohm)
- High output power: P1dB = 16 W (typ.) @ P1dB
- High power gain: GLP = 8.0 dB (typ.)
- High power added efficiency: PAE = 30 % (typ.)
