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MITSUBISHI
PM25CLA120
FLAT-BASE TYPE INSULATED PACKAGE
PM25CLA120
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. • 3φ 25A, 1200V Current-sense IGBT type inverter • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) • Acoustic noise-less 3.
PM25CLA120 Datasheet
