Datasheet Summary
MITSUBISHI <INTELLIGENT POWER MODULES>
FLAT-BASE TYPE INSULATED PACKAGE
FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM.
- 3φ 25A, 1200V Current-sense IGBT type inverter
- Monolithic gate drive & protection logic
- Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices)
- Acoustic noise-less 3.7kW class inverter...