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PM50RLA060 - Intelligent Power Module

Key Features

  • VUP1 UFo UP VUPC 1.5k ¡ Vcc Fo In OT OUT Si U VD IF +.
  • GND GND Vcc Fo In GND GND Vcc Fo OT OUT Si W OT OUT Si OT OUT Si V ≥ 0.1µ VVP1 VFo 1.5k VD www. DataSheet4U. com VP VVPC VWP1 WFo 1.5k M VD 20k WP VWPC In GND GND Vcc Fo ¡ IF ≥ 10 µ UN ≥ 0.1µ In GND GND N OT 20k ¡ IF ≥ 10 µ Vcc VN Fo In OUT Si ≥ 0.1µ 20k GND GND VN1 ≥ 10 µ ¡ Vcc Fo In OT OUT Si B VD IF WN ≥ 0.1µ VNC GND GND Vcc OT O.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI PM50RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM50RLA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series. d) Current rating of brake part increased. 60% for the current rating of inverter part.