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PM50RSD120 - Intelligent Power Module

Key Features

  • ng time Test circuit and waveform P, (U,V,W) A IN Fo VCIN Pulse VCE VCIN (15V) Over Current VD (all) U,V,W, (N) IC toff (OC) Constant Current OC Fig. 4 ICES Test P, (U,V,W) IN Fo Short Circuit Current VCC IC Constant Current VCIN SC VD (all) U,V,W, (N) IC Fig. 5 OC and SC Test Fig. 6 OC and SC Test waveform P VD VCINP U,V,W Vcc VD VCINN N Ic VCINP 0V VCINN 0V t t tdead tdead tdead Fig. 7 Dead time measurement point.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI MITSUBISHI MODULES> PM50RSD120 PM50RSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM50RSD120 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package compatibility. The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.