Datasheet Summary
MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES>
PM50RSD120 PM50RSD120
FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE
FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package patibility. The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.
- 3φ 50A, 1200V Current-sense IGBT for 15kHz switching
- 15A, 1200V Current-sense regenerative brake IGBT
- Monolithic gate drive & protection logic
- Detection, protection & status...