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PM50RSE060 - Intelligent Power Module

Key Features

  • 5 OC and SC Test Fig. 6 OC and SC Test waveform P VD VCINP U,V,W Vcc VD VCINN N Ic VCINP 0V VCINN 0V t t tdead tdead tdead Fig. 7 Dead time measurement point example Jul. 2005.

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MITSUBISHI MITSUBISHI MODULES> PM50RSE060 PM50RSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM50RSE060 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 50A, 600V Current-sense IGBT for 15kHz switching • 15A, 600V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage • Acoustic noise-less 3.7kW class inverter application • UL Recognized Yellow Card No.E80276(N) File No.E80271 www.