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MITSUBISHI MITSUBISHI MODULES>
PM50RSE120 PM50RSE120
FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE
PM50RSE120
FEATURE
a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 50A, 1200V Current-sense IGBT for 15kHz switching • 15A, 1200V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage • Acoustic noise-less 5.5/7.5kW class inverter application • UL Recognized Yellow Card No.E80276(N) File No.E80271
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PM50RSE120 Datasheet
