PM75CSE060 Datasheet | Mitsubishi Electric

MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSE060 PM75CSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. - 3φ 75A, 600V Current-sense IGBT for 15k Hz switching - Monolithic gate drive & protection logic - Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage - Acoustic noise-less 5.5/7.5k W class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 110±1 95±0.5 2-2.54 2-2.54 2-2.54 6-2.54 17.02 10.16 10.16 10.16 3.22 Screwing depth Min9.0 4-φ5.5 MOUNTING HOLES Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UP VUP1 VVPC VP VVP1 VWPC WP VWP1 VNC 11. 12. 13. 14. 15. 16. VN1 NC UN VN WN FO 2±0.5 4 56 78 9 10 12 14 16 11 13 15 74±0.5 20 89±1 0.5±0.3 24.5 4-R6 26 67.4 160.64 2-φ2.54 26 6-M5NUTS 21.2 22 - 0.5 +1.0 2-2.54 A : DETAIL 31.6 19.4 LABEL φ2.54...