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PM75RLA060 - Intelligent Power Module

Key Features

  • VVP1 VFo 1.5k VP VVPC VD ¡ IF VWP1 WFo 1.5k WP VWPC 20k ≥10µ UN ≥0.1µ 20k ¡ ≥10µ I F VN ≥0.1µ 20k VN1 ¡ ≥10µ VD I F WN ¡ 4.7k IF ≥0.1µ 5V 1k VNC Br Fo 1.5k Vcc OT OUT Fo Si In GND GND Vcc OT OUT Fo Si In GND GND Vcc OT OUT Fo Si In GND GND OT Vcc OUT Fo Si In GND GND OT Vcc OUT Fo Si In GND GND Vcc OT Fo OUT Si In GND GND Vcc OT Fo OUT Si In GND GND P +.
  • U VM W N B : Interface which is the same as t.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI PM75RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM75RLA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series. d) Current rating of brake part increased. 67% for the current rating of inverter part.