Sheet. net/
[B] Under-Voltage Protection (Lower-arm, UVD)
b1. Control supply voltage rises : After the voltage level reaches UVDr, the circuits start to operate when next input is applied. b2. Normal operation : IGBT ON and carrying current. b3. Under voltage trip (UVDt). b4. IGBT OFF in spite of control input condition. b5. FO output (tFO.
Full PDF Text Transcription for PS21963-S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
PS21963-S. For precise diagrams, and layout, please refer to the original PDF.
MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Dual-In-Line <Dual-In-Line Package Package Intelligent Intelligent Power Power Module> Module> PS21963-S PS21963-S TRAN...
View more extracted text
igent Intelligent Power Power Module> Module> PS21963-S PS21963-S TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21963-S INTEGRATED POWER FUNCTIONS 600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion. Open emitter type. INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS • • • • For upper-leg IGBTS : Drive circuit, High voltage isolated high-speed level shifting, Control supply under-voltage (UV) protection. For lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC).
PS21963-S Datasheet
