RA07M1317M - Silicon RF Power Modules

Product Overview

Mitsubishi Electric Semiconductor

Part number	RA07M1317M
Manufacturer	Mitsubishi Electric Semiconductor
File Size	573.13 KB
Description	Silicon RF Power Modules
Datasheet	RA07M1317M Datasheet
Additional preview pages of the RA07M1317M datasheet.

The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to 175-MHz range.

Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=7.2V, VGG=0V).
Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW.
ηT>45% @ Pout=6W (V GG control), VDD=7.2V, Pin=20mW.
Broadband Frequency Range: 135-175MHz.
Low-Power Control Current IGG=1mA (typ) at VGG=3.5V.
Module Size: 30 x 10 x 5.4 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5.

📁 Similar Datasheet

RA07M0608M - RoHS Compliance (Mitsubishi Electric)
RA07M3843M - RoHS Compliance (Mitsubishi Electric)
RA07M4047M - RoHS Compliance (Mitsubishi Electric)
RA07M4452M - Silicon RF Power Modules (Mitsubishi Electric)
RA07H3340M - RF MOSFET MODULE 330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO (Mitsubishi Electric)
RA07H4452M - RoHS Compliance (Mitsubishi Electric)
RA07N3340M - RoHS Compliance (Mitsubishi Electric)
RA0086 - 80-CH Segment/Common Driver (RAiO)

Other Datasheets by Mitsubishi Electric Semiconductor

RA07M2127M - MITSUBISHI RF MOSFET MODULE
RA07M3340M - MITSUBISHI RF MOSFET MODULE
RA07H0608M - MITSUBISHI RF MOSFET MODULE
RA07H4047M - 400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO
RA07H4047M-01 - 400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO
RA07H4047M-E01 - 400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO

Published: Apr 16, 2005 |