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RA07N4047M-E01 Datasheet

Manufacturer: Mitsubishi Electric
RA07N4047M-E01 datasheet preview

Datasheet Details

Part number RA07N4047M-E01
Datasheet RA07N4047M-E01_MitsubishiElectricSemiconductor.pdf
File Size 62.20 KB
Manufacturer Mitsubishi Electric
Description MITSUBISHI RF MOSFET MODULE
RA07N4047M-E01 page 2 RA07N4047M-E01 page 3

RA07N4047M-E01 Overview

The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.

RA07N4047M-E01 Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=9.6V, VGG=0V)
  • Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW
  • ηT>43% @ Pout=7W (V GG control), VDD=9.6V, Pin=20mW
  • Broadband Frequency Range: 400-470MHz
  • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
  • Module Size: 30 x 10 x 5.4 mm
  • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output pow
  • packed without desiccator)
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