RA08H1317M - Silicon RF Power Modules

Product Overview

Mitsubishi Electric Semiconductor

Part number	RA08H1317M
Manufacturer	Mitsubishi Electric Semiconductor
File Size	1.27 MB
Description	Silicon RF Power Modules
Datasheet	RA08H1317M Datasheet
Additional preview pages of the RA08H1317M datasheet.

The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to 175-MHz range.

Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V).
Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW.
ηT>40% @ Pout=8W (V GG control), VDD=12.5V, Pin=20mW.
Broadband Frequency Range: 135-175MHz.
Low-Power Control Current IGG=1mA (typ) at VGG=3.5V.
Module Size: 30 x 10 x 5.4 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5.

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RA07M1317M - Silicon RF Power Modules

Published: Apr 16, 2005 |