RA08H1317M Description
The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.
RA08H1317M Key Features
- Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
- Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW
- ηT>40% @ Pout=8W (V GG control), VDD=12.5V, Pin=20mW
- Broadband Frequency Range: 135-175MHz
- Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
- Module Size: 30 x 10 x 5.4 mm
- Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output pow
- packed without desiccator)