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RA08H1317M - Silicon RF Power Modules

Datasheet Summary

Description

The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to 175-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Features

Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V).
Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW.
ηT>40% @ Pout=8W (V GG control), VDD=12.5V, Pin=20mW.
Broadband Frequency Range: 135-175MHz.
Low-Power Control Current IGG=1mA (typ) at VGG=3.5V.
Module Size: 30 x 10 x 5.4 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5.

Datasheet Details

Part number	RA08H1317M
Manufacturer	Mitsubishi Electric Semiconductor
File Size	1.27 MB
Description	Silicon RF Power Modules
Datasheet	RA08H1317M Datasheet
Additional preview pages of the RA08H1317M datasheet.

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Full PDF Text Transcription

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317M 135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.

Published: Apr 16, 2005 |