RA20H8087M Datasheet PDF - Mitsubishi Electric Semiconductor 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO Specs

RA20H8087M - 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO

Datasheet Summary

Description

The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Features

Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V).
Pout>20W, ηT>25% @ VDD=12.5V, VGG=5V, Pin=50mW.
Broadband Frequency Range: 806-825/ 851-870MHz.
Low-Power Control Current IGG=1mA (typ) at VGG=5V.
Module Size: 66 x 21 x 9.88 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 3 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (V.

Datasheet Details

Part number	RA20H8087M
Manufacturer	Mitsubishi Electric Semiconductor
File Size	77.76 KB
Description	806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO
Datasheet	RA20H8087M Datasheet
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Full PDF Text Transcription

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M BLOCK DIAGRAM 806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum).

Published: Apr 16, 2005 |