• Part: RA30H1317M
  • Description: RF MOSFET MODULE
  • Category: MOSFET
  • Manufacturer: Mitsubishi Electric
  • Size: 90.86 KB
Download RA30H1317M Datasheet PDF
Mitsubishi Electric
RA30H1317M
DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 d B. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power bees available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 m A. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and...