Datasheet4U Logo Datasheet4U.com

RA30H2127M - 210-270MHz 30W 12.5V MOBILE RADIO

General Description

The RA30H2127M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 210- to 270-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V).
  • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
  • Broadband Frequency Range: 210-270MHz.
  • Low-Power Control Current IGG=1mA (typ) at VGG=5V.
  • Module Size: 66 x 21 x 9.88 mm.
  • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Cont.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RA30H1317M1 Silicon RF Power Modules Mitsubishi
RA30H1721M RoHS Compliance Mitsubishi Electric
RA30H3340M Silicon RF Power Modules Mitsubishi Electric
RA30H4452M1A Silicon RF Power Modules Mitsubishi
RA30421051 (RA3xxxx) Reed Relays HAMLIN

Other Datasheets by Mitsubishi Electric

Part Number Description
RA30H0608M 30-watt RF MOSFET Amplifier Module
RA30H1317M RF MOSFET MODULE
RA30H4047M 400-470MHz 30W 12.5V MOBILE RADIO
RA30H4452M 30-watt RF MOSFET Amplifier Module
RA35H1516M 154-162MHz 40W 12.5V MOBILE RADIO

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H2127M 210-270MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA30H2127M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 210- to 270-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum).