RA35H1516M
Overview
- Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
- Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW
- Low-Power Control Current IGG=1mA (typ) at VGG=5V
- Module Size: 66 x 21 x 9.88 mm
- Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5
