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RA45H4047M

Manufacturer: Mitsubishi Electric

RA45H4047M datasheet by Mitsubishi Electric.

RA45H4047M datasheet preview

RA45H4047M Datasheet Details

Part number RA45H4047M
Datasheet RA45H4047M_MitsubishiElectricSemiconductor.pdf
File Size 93.33 KB
Manufacturer Mitsubishi Electric
Description MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO
RA45H4047M page 2 RA45H4047M page 3

RA45H4047M Overview

The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.

RA45H4047M Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
  • Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
  • Broadband Frequency Range: 400-470MHz
  • Low-Power Control Current IGG=1mA (typ) at VGG=5V
  • Module Size: 66 x 21 x 9.88 mm
  • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output pow
  • packed without desiccator)
  • Frequency Range Output Power Total Efficiency 2
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RA45H4047M-01 MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO
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