RA80H1415M1 Datasheet | Mitsubishi Electric

< Silicon RF Power Modules > Ro HS pliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 144- to 148-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power bees available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 m A. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. Features - Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) - Pout>80W, T>50% @f=144-148MHz, Pout>60W, T>50% @ f=136-174MHz, VDD=12.5V, VGG=5V, Pin=50m W - Broadband Frequency Range: 136-174MHz - Low-Power Control Current IGG=1m A (typ) at VGG=5V - Module Size: 67 x 19.4 x 9.9 mm BLOCK DIAGRAM 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (FIN) PACKAGE CODE: H2M Ro HS PLIANCE - RA80H1415M1-201 is a Ro HS pliant product. - Ro HS pliance is indicate by the letter “G201” after the Lot Marking. - This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However ,it is applicable to the following exceptions of Ro HS Directions. Electrical and electronic ponents containing lead in a glass or ceramic other than dielectric ceramic in capacitors, e.g. piezoelectronic devices, or in a glass or ceramic matrix pound. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA80H1415M1-201 Antistatic tray, 10 modules/tray Publication Date :Jun.2013 < Silicon RF Power...