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RA80H1415M1

Manufacturer: Mitsubishi Electric

RA80H1415M1 datasheet by Mitsubishi Electric.

RA80H1415M1 datasheet preview

RA80H1415M1 Datasheet Details

Part number RA80H1415M1
Datasheet RA80H1415M1-MitsubishiElectricSemiconductor.pdf
File Size 303.70 KB
Manufacturer Mitsubishi Electric
Description Silicon RF Power Modules
RA80H1415M1 page 2 RA80H1415M1 page 3

RA80H1415M1 Overview

The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 144- to 148-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases.

RA80H1415M1 Key Features

  • Enhancement-Mode MOSFET Transistors
  • Pout>80W, T>50% @f=144-148MHz, Pout>60W, T>50% @ f=136-174MHz
  • Broadband Frequency Range: 136-174MHz
  • Low-Power Control Current IGG=1mA (typ) at VGG=5V
  • Module Size: 67 x 19.4 x 9.9 mm
  • RA80H1415M1-201 is a RoHS pliant product
  • RoHS pliance is indicate by the letter “G201” after the Lot Marking
  • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts
  • 40 to +110
  • 174 MHz
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