Datasheet4U Logo Datasheet4U.com

RA80H1415M1 - Silicon RF Power Modules

General Description

The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 144- to 148-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

The output power and drain current increase as the gate voltage increases.

Key Features

  • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V).
  • Pout>80W, T>50% @f=144-148MHz, Pout>60W, T>50% @ f=136-174MHz, VDD=12.5V, VGG=5V, Pin=50mW.
  • Broadband Frequency Range: 136-174MHz.
  • Low-Power Control Current IGG=1mA (typ) at VGG=5V.
  • Module Size: 67 x 19.4 x 9.9 mm BLOCK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RA832A Switching Relays Honeywell
RA8802 (RA8802 / RA8820) Character/Graphic LCD-Controller Specification RAIO Technology
RA8803 Two Layers Text/Graphic LCD Controller RAIO Technology
RA8806 Two Layers Character/Graphic LCD Controller RAIO Technology
RA8808 128 x 64 Driver for Dot Matrix LCD RAiO

Other Datasheets by Mitsubishi Electric

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
< Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 144- to 148-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.