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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
OUTLINE DRAWING
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
4
FEATURES
High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
note(3)
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
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2 3
PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) note: (1)Torelance of no designation means typical value. Dimension in mm. (2) :Dipping area
RoHS COMPLIANT
RD06HVF1-101 is a RoHS compliant products. :Copper of the ground work is exposed in case of frame separation.
RD06HVF1 Datasheet
