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RD15HVF1 - Silicon MOSFET Power Transistor

General Description

RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions.

Key Features

  • High power and High Gain: Pout>15 W, Gp>14 dB @Vds=12.5 V,f=175 MHz High Efficiency: 60 % (typ) on VHF Band Integrated gate protection diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions. OUTLINE DRAWING 9.1+/-0.7 3.6+/-0.2 2 1.3+/-0.4 12.3+/-0.6 3.2+/-0.4 4.8MAX 9+/-0.4 FEATURES High power and High Gain: Pout>15 W, Gp>14 dB @Vds=12.5 V,f=175 MHz High Efficiency: 60 % (typ) on VHF Band Integrated gate protection diode APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 12.3MIN 1.2+/-0.4 0.8+0.10/-0.15 123 2.5 2.5 0.5+0.10/-0.15 3.1+/-0.6 4.5+/-0.5 5deg PINS 1:GAT E 9.5MAX 2:SOURCE note: 3:DRAIN Torelance of no designation means typical value. Dimension in mm.