RD20HMF1 Description
RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications. 7.2+/-0.5 OUTLINE DRAWING 22.0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1 High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency:.