RD30HUF1 Description
RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. 7.2+/-0.5 OUTLINE High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz High Efficiency:.
| Part number | RD30HUF1 |
|---|---|
| Download | RD30HUF1 Datasheet (PDF) |
| File Size | 398.12 KB |
| Manufacturer | Mitsubishi Electric |
| Description | Silicon MOSFET |
|
|
|
RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. 7.2+/-0.5 OUTLINE High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz High Efficiency:.