RD30HUF1 - Silicon MOSFET

Datasheet Summary

Description

RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz

High Efficiency: 55%typ.

Features

1 3.0+/-0.4 5.1+/-0.5 For output stage of high power amplifiers in UHF band mobile radio sets. 2.3+/-0.3.

Mitsubishi Electric Semiconductor

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Datasheet Details

Part number	RD30HUF1
Manufacturer	Mitsubishi Electric Semiconductor
File Size	398.12 KB
Description	Silicon MOSFET
Datasheet	RD30HUF1 Datasheet
Additional preview pages of the RD30HUF1 datasheet.

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HUF1 DRAWING 22.0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1 Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. 7.2+/-0.5 OUTLINE •High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz •High Efficiency: 55%typ. 2 3 R1.6 14.0+/-0.4 6.6+/-0.3 FEATURES 1 3.0+/-0.4 5.1+/-0.5 For output stage of high power amplifiers in UHF band mobile radio sets. 2.3+/-0.3 APPLICATION 2.8+/-0.3 0.10 PIN 1.Drain 2.Source 3.

Published: Apr 16, 2005 |