RD30HUF1 Overview
RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. 7.2+/-0.5 OUTLINE High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz High Efficiency:.
RD30HUF1 datasheet by Mitsubishi Electric.
| Part number | RD30HUF1 |
|---|---|
| Datasheet | RD30HUF1_MitsubishiElectricSemiconductor.pdf |
| File Size | 398.12 KB |
| Manufacturer | Mitsubishi Electric |
| Description | Silicon MOSFET |
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RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. 7.2+/-0.5 OUTLINE High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz High Efficiency:.
View all Mitsubishi Electric datasheets
| Part Number | Description |
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