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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
Silicon MOSFET Power Transistor 520MHz,60W DESCRIPTION
RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. OUTLINE DRAWING
1
24.0+/-0.6
4-C2
•High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz •High Efficiency: 55%typ.on UHF Band
2 3
10.0+/-0.3
FEATURES
R1.6+/-0.15
0.1 -0.01
+0.05
APPLICATION
For output stage of high power amplifiers in UHF Band mobile radio sets.
5.0+/-0.3
4.5+/-0.7 6.2+/-0.7
18.0+/-0.3
3.3+/-0.2
PIN 1.Drain 2.Source 3.
RD60HUF1 Datasheet
