RD60HUF1 Description
RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. OUTLINE DRAWING 1 24.0+/-0.6 4-C2 High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz High Efficiency:.
RD60HUF1 is RF POWER MOSFET manufactured by Mitsubishi Electric.
RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. OUTLINE DRAWING 1 24.0+/-0.6 4-C2 High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz High Efficiency:.