RD60HUF1 Overview
RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. OUTLINE DRAWING 1 24.0+/-0.6 4-C2 High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz High Efficiency:.
RD60HUF1 datasheet by Mitsubishi Electric.
| Part number | RD60HUF1 |
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| Datasheet | RD60HUF1_MitsubishiElectricSemiconductor.pdf |
| File Size | 320.73 KB |
| Manufacturer | Mitsubishi Electric |
| Description | RF POWER MOSFET |
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RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. OUTLINE DRAWING 1 24.0+/-0.6 4-C2 High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz High Efficiency:.
View all Mitsubishi Electric datasheets
| Part Number | Description |
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