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RM50HG-12S - HIGH SPEED SWITCHING USE NON-INSULATED TYPE

General Description

Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching.

Key Features

  • ٗ Non-Isolated Package ٗ Planar Chips ٗ trr = 200ns Max.

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MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE B F D G - DIA. K A L J 1 2 3 M E E N C H Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: ٗ Non-Isolated Package ٗ Planar Chips ٗ trr = 200ns Max. Applications: ٗ Snubber Circuits 1 3 2 4 Ordering Information: Example: Select the complete part number from the table below -i.e. RM50HG-12S is a 600V, 50 Ampere Super Fast Recovery Single Diode Module. Current Rating Amperes 50 Voltage Volts (x 50) 12 Outline Drawing and Circuit Diagram Type RM Dimension A B C D E F G Inches 1.102±0.02 0.81 Max. 0.79 Min. 0.24±0.008 0.214±0.012 0.20±0.012 Millimeters 26.0±0.5 20.5 Max. 20.0 Min. 6.0±0.2 5.45±0.3 5.0±0.