BA01207 Datasheet Gaas Hbt Hybrid Ic

Manufacturer: Mitsubishi Electric

Overview: MITSUBISHI SEMICONDUCTOR BA01207 Specifications are subject to change without notice.

Datasheet Details

Part number	BA01207
Manufacturer	Mitsubishi Electric
File Size	56.09 KB
Description	GaAs HBT HYBRID IC
Datasheet	BA01207_MitsubishiElectric.pdf

General Description

The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone.

Outline Drawing unit : milimeter 1 8 7 6 4 4.5 5 1.5max.

1:Pin 2:Vc1 3:Vc2 4:GND 5:Pout 6:Vcb 7:Vref 8:GND

Key Features

Low voltage Vc =3.5V High power Po=27.5dBm High gain Gp=27.5dB@Po=27.5dBm 2stage amplifier Internal input.
and output matching.
Use DC block for input port 2 3 1.45.

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