• Part: BA01207
  • Description: GaAs HBT HYBRID IC
  • Manufacturer: Mitsubishi Electric
  • Size: 56.09 KB
Download BA01207 Datasheet PDF
Mitsubishi Electric
BA01207
DESCRIPTION The BA01207 Ga As RF amplifier designed for J-cdma One hand-held phone. Outline Drawing unit : milimeter 1 8 7 6 4 4.5 5 1.5max. 1:Pin 2:Vc1 3:Vc2 4:GND 5:Pout 6:Vcb 7:Vref 8:GND FEATURES Low voltage Vc =3.5V High power Po=27.5d Bm High gain Gp=27.5d B@Po=27.5d Bm 2stage amplifier Internal input- and output matching - Use DC block for input port 2 3 APPLICATION N-CDMA (Spreading chip rate is 1.2288Mcps, modulation is OQPSK) hand set. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Vcc Pin Tc(op) Tstg Parameter Supply voltage of HPA Input power Operating case temp. Storage temp. Condition ZG=ZL=50Ω Ratings- 6 7 -20 ∼ +85 -30 ∼ +125 Unit V d Bm °C °C - Note : Each maximum rating is guaranteed independently . .. ELECTRICAL CHARACTERISTICS(Ta=25°C , ZG=ZL=50Ω) Limits Symbol f Iq Ict - 1 Parameter Frequency Quiescent current Total current Total current Power added efficiency Power Gain Adjacent channel power at 900KHz Adjacent channel power at 1.98MHz 2nd harmonics 3rd...