CM1200HA-66H Description
ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT MODULES CM1200HA-66H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM1200HA-66H q IC ................................................................ 1200A q VCES .......................................................