CM1200HC-50H Description
MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-50H q IC ................................................................ 1200A q VCES ....................................................... 7.7 8 - φ7 ±0.1 MOUNTING HOLES screwing depth min.