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MITSUBISHI HVIGBT MODULES
CM1200HC-50H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HC-50H
q IC ................................................................ 1200A q VCES ....................................................... 2500V q Insulated Type q 1-element in a Pack q AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.1
190 ±0.5 171 ±0.1 57 ±0.1
57 ±0.1
6 - M8 NUTS C
20 –0.2
+0.1
C
C
C
G E
124 ±0.1 140 ±0.5 40 ±0.2
C
C
C
E
E
E
CM C
E
E
E
CIRCUIT DIAGRAM
E
G
20.25 ±0.2 41.25 ±0.3 3 - M4 NUTS 79.4 ±0.3 61.5 ±0.3
screwing depth min. 7.7
8 - φ7 ±0.
CM1200HC-50H Datasheet
