CM1200HG-66H Description
MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HG-66H q IC ................................................................ 1200A q VCES ....................................................... 7.7 61.2±0.5 12±0.3 screwing depth min.