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MITSUBISHI HVIGBT MODULES
CM1200HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HG-66H
q IC ................................................................ 1200A q VCES ....................................................... 3300V q High Insulated Type q 1-element in a Pack q AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
190±0.5 57±0.25 57±0.25 57±0.25 5 - M8 NUTS
17±0.1
(6) C C
(4) C
(2) C
6
4
2
124±0.25
140±0.5
44±0.3
5 E G
3
1
G E E (5) E (3) E (1)
C
9±0.1
CIRCUIT DIAGRAM 3 - M4 NUTS
14±0.3 59.2±0.5
8 - φ 7 MOUNTING HOLES
61.2±0.5
screwing depth min. 7.7
61.
CM1200HG-66H Datasheet
