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MITSUBISHI HVIGBT MODULES
CM1600HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM1600HC-34H
q IC ................................................................ 1600A q VCES ....................................................... 1700V q Insulated Type q 1-element in a Pack q AISiC Baseplate q Soft Reverse Recovery Diode
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 114 57±0.25 57±0.25 4 - M8 NUTS
C C
C
C
C
20
124±0.25
CM
E
E
140
30
G E E E
E C
G
CIRCUIT DIAGRAM
16.5 3 - M4 NUTS 2.5 18.5 61.5
screwing depth min. 7.7
6 - φ 7 MOUNTING HOLES 5
screwing depth min. 11.7
35 11 14.
CM1600HC-34H Datasheet
