CM1600HC-34H Datasheet | Mitsubishi Electric

.. MITSUBISHI HVIGBT MODULES 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1600HC-34H q IC 1600A q VCES 1700V q Insulated Type q 1-element in a Pack q AISi C Baseplate q Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 57±0.25 4 - M8 NUTS 124±0.25 CIRCUIT DIAGRAM 16.5 3 - M4 NUTS 2.5 18.5 61.5 screwing depth min. 7.7 - φ 7 MOUNTING HOLES 5 screwing depth min. 11.7 35 11 14.5 38 +1 0 28 +1 0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 80°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ±20 1600 3200 1600 3200 12500 - 40 ~ +150 - 40 ~ +125 - 40 ~ +125 4000 10 Unit V V A A A A W °C °C °C V µs (Note 1) (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1150V, VCES ≤ 1700V, VGE = 15V Tj = 125°C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Note 1. 2. 3. 4. Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input...