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CM2400HC-34N - IGBT Module

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www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM2400HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM2400HC-34N q IC ................................................................ 2400A q VCES ....................................................... 1700V q Insulated Type q 1-element in a Pack q AISiC Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130±0.5 57±0.25 57±0.25 4 - M8 NUTS 4(C) 20±0.1 2(C) C 124±0.25 4 2 140±0.5 40±0.2 G E 3 1 3(E) 1(E) C E G CIRCUIT DIAGRAM 3 - M4 NUTS 10.65±0.2 48.8±0.2 10.35±0.2 6 - φ 7 MOUNTING HOLES 61.5±0.