CT90AM-18
CT90AM-18 is Insulated Gate Bipolar Transistor manufactured by Mitsubishi Electric.
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR
OUTLINE DRAWING
20MAX. w q VCES ............................................................................... 900V q IC ......................................................................................... 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation Voltage
0.5 3
5.45 5.45
GATE COLLECTOR EMITTER COLLECTOR
TO-3PL
APPLICATION Microwave oven, Electoromagnetic cooking devices, Rice-cookers
MAXIMUM RATINGS
Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature VGE = 0V
Conditions
Ratings 900 ± 25 ± 30 60 120 40 250
- 40 ~ +150
- 40 ~ +150
Unit V V V A A A W °C °C Sep. 2000 ww..
20.6MIN. w
2.5 w m o CT90AM-18 .c CT90AM-18 u 4 t e e h s a t a d .
MITSUBISHI Nch IGBT MITSUBISHI Nch IGBT
Dimensions in mm
5 2 φ3.2
6 1 26
MITSUBISHI Nch...
