M63815FP Datasheet | Mitsubishi Electric

DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. IN4→ 4 IN5→ OUTPUT IN6→ 6 FEATURES Three package configurations (P, FP, and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300m A) q With clamping diodes q With zener diodes q Low output saturation voltage q Wide operating temperature range (Ta = - 40 to +85 °C) q IN7→ IN8→ GND 7 8 9 → MOM Package type 18P4G(P) IN1→ 2 IN2→ 3 IN3→ 4 19 →O1 18 →O2 17 →O3 16 →O4 15 →O5 14 →O6 13 →O7 12 →O8 11 → APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals IN4→ 5 INPUT IN5→ 6 IN6→ 7 IN7→ 8 IN8→ 9 GND OUTPUT FUNCTION The M63815P/FP/KP each have eight circuits consisting of NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and pin. The transistor emitters are all connected to the GND pin. The transistors allow synchronous flow of 300m A collector current. A maximum of 35V voltage can be applied between the collector and emitter. NC : No connection 20P2N-A(FP) Package type 20P2E-A(KP) CIRCUIT DIAGRAM OUTPUT Vz=7V INPUT 10.5K 10K GND The eight circuits share the and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Ω Jan. 2000 . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL RY A N I MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP 8-UNIT 300m A TRANSISTOR ARRAY WITH CLAMP DIODE (Unless otherwise noted, Ta = - 40 ~ +85 °C) ABSOLUTE MAXIMUM RATINGS Symbol V CEO IC VI IF VR Pd Topr T stg Parameter Collector-emitter voltage Collector current Input...