Datasheet Details
| Part number | MA1046-1 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 26.54 KB |
| Description | For 1.9 GHz - Power Amplifier |
| Datasheet | MA1046-1_MitsubishiElectricSemiconductor.pdf |
|
|
|
Overview: MA1046-1 For 1.9 GHz - Power Amplifier MA1046-1 2. Electrical Performances (Tc = +25°C, VD 1, 2 = 6V, VD3 = 10V, VG 1, 2 = –5V, VG 3 = –3V, Zg = Zl = 50Ω) No. 1 Items Frequency Power Gain Temperature Characteristics (Power Gain) Gain Variation Drain Current Gate Current ACP ∆ 600 kHz ∆ 900 kHz 8 9 10 Occupied Band Width Input VSWR Spurious In Band Out Band 2 nd 3 rd 11 12 Stability against load variation Intensity against load variation ∆G ID 12 ID 3 6 7 IG 12 IG 3 ACP1 ACP2 ––– ρ in ––– ––– 2 SP 3 SP ––– ––– Po = +35 dBm Load VSWR = 1:3 All Phase Po = +35 dBm Zl = OPEN, SHORT 10 seconds each Po = +35 dBm Non-modulation < 6 GHz f= Symbol f G Po = +35 dBm π / 4 Shift QPSK Modulation –PN9 Condition Standard Min 1895 33 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Type ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max 1918 ––– ±2 ±0.5 400 1400 2 5 –65 –70 288 2.
| Part number | MA1046-1 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 26.54 KB |
| Description | For 1.9 GHz - Power Amplifier |
| Datasheet | MA1046-1_MitsubishiElectricSemiconductor.pdf |
|
|
|
The MA1046-1 is a 1.9 GHz band power amplifier (Po = +3.1W), constructed by 3 stages of GaAs MESFET, RF matching circuit, and DC bias circuit.
The shield cap is made of metal.
Input and Output impedances are designed to 50Ω.
| Part Number | Description |
|---|---|
| MA1065-1 | For 1.9 GHz - High Power Amplifier |
| MA1078-2 | For DCS1800 - 20W Power Amplifier |
| MA1100-1 | For DCS1800 - 30W Power Amplifier |
| MA1113-1 | For PCS - 20W Power Amplifier |
| MA1114-1 | For PCS - 30W Power Amplifier |