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MGF1953A - Microwave Power MES FET

General Description

The MGF1953A is designed for use in S to Ku band power amplifiers.

The lead-less ceramic package assures minimum parasitic losses.

Key Features

  • High gain and High P1dB Glp=6.0dB , P1dB=20dBm (Typ. ) @ f=12GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Aug. /2004 MITSUBISHI SEMICONDUCTOR MGF1953A Microwave Power MES FET (Leadless Ceramic Package) DESCRIPTION The MGF1953A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB Glp=6.0dB , P1dB=20dBm (Typ.) @ f=12GHz APPLICATION S to Ku band power Amplifiers Fig.1 QUALITY GRADE GG RECOMMENDED BIAS CONDITION VDS=6V, ID=100mA ORDERING INFORMATION Tape & reel 3000pcs./reel Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them.