MGF4953B Description
The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
| Part number | MGF4953B |
|---|---|
| Download | MGF4953B Datasheet (PDF) |
| File Size | 145.16 KB |
| Manufacturer | Mitsubishi Electric |
| Description | SUPER LOW NOISE InGaAs |
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| Part Number | Description |
|---|---|
| MGF4953A | SUPER LOW NOISE InGaAs HEMT |
| MGF4954A | SUPER LOW NOISE InGaAs HEMT |
| MGF4910D | (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT |
| MGF4910E | (MGF4910E Series) Super Low Noise InGaAs HEMT |
| MGF4914D | (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT |
The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.