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MGF4953B Datasheet Super Low Noise Ingaas

Manufacturer: Mitsubishi Electric

Overview: .. Nｏｖ./2006 MITSUBISHI SEMICONDUTOR MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic.

General Description

The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

The lead-less ceramic package assures minimum parasitic losses.

Outline Drawing

Key Features

  • Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ. ) High associated gain @ f=20GHz Gs = 10.5dB (Typ. ) Fig.1.

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