Datasheet Summary
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Nｏｖ./2006
MITSUBISHI SEMICONDUTOR <GaAs FET>
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
Features
Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=20GHz Gs = 10.5dB (Typ.)
Fig.1
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
REMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel...