MGF4961B Description
The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. Outline Drawing 4.0±0.2 (1.05) 1.9±0.1 (1.05) (unit:.
- Part: MGF4961B
- Manufacturer: Mitsubishi Electric
- Size: 137.32 KB
Related Mitsubishi Electric Datasheets
| Part Number | Description |
|---|---|
| MGF4910D | (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT |
| MGF4910E | (MGF4910E Series) Super Low Noise InGaAs HEMT |
| MGF4914D | (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT |
| MGF4914E | (MGF4910E Series) Super Low Noise InGaAs HEMT |
| MGF4916D | (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT |