MGF4961B Datasheet Super Low Noise Ingaas Hemt

Manufacturer: Mitsubishi Electric

Overview: MITSUBISHI SEMICONDUTOR Feb./2007 MGF4961B SUPER LOW NOISE InGaAs.

Datasheet Details

Part number	MGF4961B
Manufacturer	Mitsubishi Electric
File Size	137.32 KB
Description	SUPER LOW NOISE InGaAs HEMT
Datasheet	MGF4961B_MitsubishiElectric.pdf

General Description

The MGF4961B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

Outline Drawing 4.0±0.2 (1.05) 1.9±0.1 (1.05) (unit: mm)

Key Features

Low noise figure @ f=20GHz NFmin. = 0.7dB (Typ. ) High associated gain @ f=20GHz Gs = 13.5dB (Typ. ) (1.05) ① C to K band low noise amplifiers 0.5±0.1 ③ 1.19±0.2 0.125 ±0.05.

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