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MGFC40V3742 - C band internally matched power GaAs FET

Description

The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7

4.2 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=10W (TYP. ) @f=3.7.
  • 4.2GHz.
  • High power gain GLP=11dB (TYP. ) @f=3.7.
  • 4.2GHz.
  • High power added efficiency P. A. E. =32% (TYP. ) @f=3.7.
  • 4.2GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=29dBm S. C. L.

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Datasheet preview – MGFC40V3742

Datasheet Details

Part number MGFC40V3742
Manufacturer Mitsubishi Electric
File Size 87.73 KB
Description C band internally matched power GaAs FET
Datasheet download datasheet MGFC40V3742 Datasheet
Additional preview pages of the MGFC40V3742 datasheet.

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< C band internally matched power GaAs FET > MGFC40V3742 3.7 – 4.2 GHz BAND / 10W DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=10W (TYP.) @f=3.7 – 4.2GHz  High power gain GLP=11dB (TYP.) @f=3.7 – 4.2GHz  High power added efficiency P.A.E.=32% (TYP.) @f=3.7 – 4.2GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=29dBm S.C.L APPLICATION  item 01 : 3.7 – 4.2 GHz band power amplifier  item 51 : 3.7 – 4.2 GHz band digital radio communication OUTLINE DRAWING Unit: millimeters (inches) R1.25 24+ /-0.3 (1) 0.6+/-0.15 2MIN R1.
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