MGFC40V4450
MGFC40V4450 is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
DESCRIPTION
The MGFC40V4450 is an internally impedance-matched Ga As power FET especially designed for use in 3.7
- 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system
- High output power
P1d B=10W (TYP.) @f=4.4
- 5.0GHz
- High power gain
GLP=10.0d B (TYP.) @f=4.4
- 5.0GHz
- High power added efficiency
P.A.E.=32% (TYP.) @f=4.4
- 5.0GHz
- Low distortion [item -51]
IM3=-45d Bc (Typ.) @Po=29.0d Bm S.C.L
APPLICATION
- item 01 : 4.4
- 5.0 GHz band microwave high power amplifier
- item 51 : 4.4
- 5.0 GHz band digital radio munication
QUALITY
- IG
REMENDED BIAS CONDITIONS
- VDS=10V
- ID=2.4A
- RG=50ohm Refer to Bias Procedure
4.2±0.3
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
VGDO Gate to drain breakdown voltage
VGSO Gate to source breakdown voltage
ID Drain...
