MGFC42V5964A
MGFC42V5964A is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
DESCRIPTION
The MGFC42V5964A is an internally impedance-matched Ga As power FET especially designed for use in 5.9
- 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system
- High output power
P1d B=16W (TYP.) @f=5.9
- 6.4GHz
- High power gain
GLP=9.0d B (TYP.) @f=5.9
- 6.4GHz
- High power added efficiency
P.A.E.=33% (TYP.) @f=5.9
- 6.4GHz
- Low distortion [item -51]
IM3=-45d Bc (TYP.) @Po=31.0d Bm S.C.L
APPLICATION
- item 01 : 5.9
- 6.4 GHz band power amplifier
- item 51 : 5.9
- 6.4 GHz band digital radio munication
QUALITY
- IG
2MIN
17.4 +/- 0.2 8.0 +/- 0.2
2MIN
OUTLINE
R1.2
24 +/- 0.3 unit : mm
0.6 +/- 0.15 (1 )
(2 )
(3 ) 20.4 +/- 0.2 16.7
0.1 +/- 0.05 2.4 +/- 0.2
4.3 +/- 0.4 1.4
REMENDED BIAS CONDITIONS
- VDS=10V
- ID=4.5A
- RG=25ohm Refer to Bias Procedure
Absolu...
