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MGFC42V6472A - C band internally matched power GaAs FET

Description

The MGFC42V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4

7.2 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Internally matched to 50(ohm) system.
  • High output power P1dB=16W (TYP. ) @f=6.4.
  • 7.2GHz.
  • High power gain GLP=8.0dB (TYP. ) @f=6.4.
  • 7.2GHz.
  • High power added efficiency P. A. E. =31% (TYP. ) @f=6.4.
  • 7.2GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=31.0dBm S. C. L.

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Datasheet preview – MGFC42V6472A

Datasheet Details

Part number MGFC42V6472A
Manufacturer Mitsubishi Electric
File Size 75.22 KB
Description C band internally matched power GaAs FET
Datasheet download datasheet MGFC42V6472A Datasheet
Additional preview pages of the MGFC42V6472A datasheet.

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< C band internally matched power GaAs FET > MGFC42V6472A 6.4 – 7.2 GHz BAND / 16W DESCRIPTION The MGFC42V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system  High output power P1dB=16W (TYP.) @f=6.4 – 7.2GHz  High power gain GLP=8.0dB (TYP.) @f=6.4 – 7.2GHz  High power added efficiency P.A.E.=31% (TYP.) @f=6.4 – 7.2GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=31.0dBm S.C.L APPLICATION  item 01 : 6.4 – 7.2 GHz band power amplifier  item 51 : 6.4 – 7.2 GHz band digital radio communication QUALITY  IG 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN OUTLINE R1.2 24 +/- 0.3 unit : mm 0.6 +/- 0.
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