• Part: MGFC42V6472A
  • Description: C band internally matched power GaAs FET
  • Manufacturer: Mitsubishi Electric
  • Size: 75.22 KB
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Mitsubishi Electric
MGFC42V6472A
MGFC42V6472A is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
DESCRIPTION The MGFC42V6472A is an internally impedance-matched Ga As power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system - High output power P1d B=16W (TYP.) @f=6.4 - 7.2GHz - High power gain GLP=8.0d B (TYP.) @f=6.4 - 7.2GHz - High power added efficiency P.A.E.=31% (TYP.) @f=6.4 - 7.2GHz - Low distortion [item -51] IM3=-45d Bc (TYP.) @Po=31.0d Bm S.C.L APPLICATION - item 01 : 6.4 - 7.2 GHz band power amplifier - item 51 : 6.4 - 7.2 GHz band digital radio munication QUALITY - IG 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN OUTLINE R1.2 24 +/- 0.3 unit : mm 0.6 +/- 0.15 (1 ) (2 ) (3 ) 20.4 +/- 0.2 16.7 0.1 +/- 0.05 2.4 +/- 0.2 4.3 +/- 0.4 1.4 REMENDED BIAS CONDITIONS - VDS=10V - ID=4.5A - RG=25ohm Refer to Bias Procedure Absolu...