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ML101J22 - a high power AlGaInP semiconductor laser

General Description

ML1XX22 is semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658nm and standard pulse light output of 180mW.

Key Features

  • a high-power, high-efficient AlGaInP.
  • High Output Power: 180mW (Pulse).
  • High Efficiency: 0.95W/A (typ. ).
  • Visible Light: 658nm (typ. ).
  • Low Aspect Ratio (θ⊥ / θ//): 1.8 (typ. ).
  • Low Astigmatic Distance: 1 µm (typ. ).

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Other Datasheets by Mitsubishi Electric

Part Number Description
ML101J21 LASER DIODES
ML101J23 LASER DIODES
ML101J24 LASER DIODES
ML101J25 LASER DIODES
ML101J26 LASER DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MITSUBISHI LASER DIODES ML1XX22 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J22, ML120G22 FEATURES a high-power, high-efficient AlGaInP •High Output Power: 180mW (Pulse) • High Efficiency: 0.95W/A (typ.) • Visible Light: 658nm (typ.) • Low Aspect Ratio (θ⊥ / θ//): 1.8 (typ.) • Low Astigmatic Distance: 1 µm (typ.) DESCRIPTION ML1XX22 is semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658nm and standard pulse light output of 180mW. ML1XX22 has a real-index-waveguide which improves the slope efficiency (reduction of the operating current) and the astigmatic distance. Also, ML1XX22 has a window-mirror-facet which improves the maximum output power.