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ML120G22 - a high power AlGaInP semiconductor laser

This page provides the datasheet information for the ML120G22, a member of the ML101J22 a high power AlGaInP semiconductor laser family.

Description

ML1XX22 is semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658nm and standard pulse light output of 180mW.

Features

  • a high-power, high-efficient AlGaInP.
  • High Output Power: 180mW (Pulse).
  • High Efficiency: 0.95W/A (typ. ).
  • Visible Light: 658nm (typ. ).
  • Low Aspect Ratio (θ⊥ / θ//): 1.8 (typ. ).
  • Low Astigmatic Distance: 1 µm (typ. ).

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Datasheet preview – ML120G22

Datasheet Details

Part number ML120G22
Manufacturer Mitsubishi Electric
File Size 115.53 KB
Description a high power AlGaInP semiconductor laser
Datasheet download datasheet ML120G22 Datasheet
Additional preview pages of the ML120G22 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com MITSUBISHI LASER DIODES ML1XX22 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J22, ML120G22 FEATURES a high-power, high-efficient AlGaInP •High Output Power: 180mW (Pulse) • High Efficiency: 0.95W/A (typ.) • Visible Light: 658nm (typ.) • Low Aspect Ratio (θ⊥ / θ//): 1.8 (typ.) • Low Astigmatic Distance: 1 µm (typ.) DESCRIPTION ML1XX22 is semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658nm and standard pulse light output of 180mW. ML1XX22 has a real-index-waveguide which improves the slope efficiency (reduction of the operating current) and the astigmatic distance. Also, ML1XX22 has a window-mirror-facet which improves the maximum output power.
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