• Part: ML925B40F
  • Description: 2.5Gbps InGaAsP DFB LASER DIODE
  • Category: Diode
  • Manufacturer: Mitsubishi Electric
  • Size: 237.19 KB
Download ML925B40F Datasheet PDF
Mitsubishi Electric
ML925B40F
ML925B40F is 2.5Gbps InGaAsP DFB LASER DIODE manufactured by Mitsubishi Electric.
- Part of the ML920J40S comparator family.
DESCRIPTION ML925B40F / ML920J40S ML925J40F / ML920L40S APPLICATION - 2.5Gbps long-haul transmission - Coarse WDM application ML9XX40 series are uncooled DFB (Distributed Feedback) laser diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm. λ/4 shifted grating structure is employed to obtain excellent SMSR performance under 2.5Gbps modulation. Furthermore, ML9xx40 can operate in the wide temperature range from 0o C to 85 o C without any temperature control. They are well suited for light source in long distance digital transmission application of coarse WDM. FEATURES - λ/4 shifted grating structure - Wide temperature range operation (0o C to 85o C) - High side-mode-suppression-ratio (typical 45d B) - High resonance frequency (typical 11GHz) ABSOLUTE MAXIMUM RATINGS Symbol Po If VRL IFD VRD Tc Tstg Parameter Output power Forward current (Laser diode) Reverse voltage (Laser diode) Forward current (Photo diode) Reverse voltage (Photo diode) Case temperature Storage temperature Conditions CW ------------Ratings 6 150 2 2 20 0 to +85 -40 to +100 Unit m W m A V m A V ºC ºC ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC) .. Symbol Ith Parameter Threshold current Iop Operation current Vop η λp SMSR θ // θ┴ fr tr,tf Operating voltage Slope efficiency Peak wavelength Side mode suppression ratio Side mode suppression ratio(RF) Beam divergence angle (parallel) <- 6> (perpendicular) <- 6> Resonance frequency Rise and Fall time <- 7> Test conditions CW CW <- 1> Tc=85ºC <- 2> CW, Po=5m W CW, Po=5m W <- 1> Tc=85ºC <- 2> CW, Po=5m W CW, Po=5m W CW, Po=5m W <- 3> CW, Po=5m W CW, Po=5m W, Tc=0 to 85ºC 2.48832Gbps,Ib=Ith, Ipp=40m A CW, Po=5m W CW, Po=5m W 2.48832Gbps,Ib=Ith, Ipp=40m A 2.48832Gbps,Ib=Ith, Ipp=40m A 20%-80% CW, Po=5m W,VRD=1V,RL=10Ω VRD=5V VRD=5V Min. Typ. Max. Unit --10 15 m A --35 40 --45 50 --35 45 m A --70 80 --90 100 --1.1 1.5 V 0.17 0.22 --m W/m A 0.15 0.20 --<- 4>,<- 5> nm 35 45 --d B --45 ----25 --deg. ------0.1 ----30 11 80 ----10 ----120 1.0 0.1 20 deg. GHz ps m A µA p...