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MITSUBISHI MITSUBISHI MODULES>
PM150RSE060 PM150RSE060
FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE
PM150RSE060
FEATURE
a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 150A, 600V Current-sense IGBT for 15kHz switching • 50A, 600V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage • Acoustic noise-less 15/18.
PM150RSE060 Datasheet
