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PM75B5LA060 - Intelligent Power Module

Key Features

  • → UN ≥ 0.1µ ≥ 10µ Vcc Fo IN OUT OT SC N GND GND 20k IF → VN ≥ 0.1µ ≥ 10µ Vcc Fo IN OUT OT SC GND GND 20k VN1 IF → WN ≥ 0.1µ ≥ 10µ Vcc Fo IN OUT OT SC VNC GND GND B FO 1.5k NC Fig. 8.

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www.DataSheet4U.com MITSUBISHI PM75B5LA060 FLAT-BASE TYPE INSULATED PACKAGE PM75B5LA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C b) Over-temperature protection by detecting Tj of the CSTBT TM chips and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series.