PM75CLB060 Datasheet | Mitsubishi Electric

FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 32%, thickness by 22% from S-DASH series. - 3φ 75A, 600V Current-sense IGBT type inverter - Monolithic gate drive & protection logic - Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) - Acoustic noise-less 5.5k W/7.5k W class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES 120 7 19.75 3.25 16 3-2 106 ±0.25 66.5 Dimensions in mm 17 16 3-2 16 3-2 15.25 6-2 2-φ5.5 MOUNTING HOLES 1 1.5 1.5 16 3 4 4 25.75 55 1 P 4 4 4 4 2.5 19.5 22 7.75 23 4 4 4 4 4 4 4- φ2 2-φ2.5 .5 23 98.25 Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UFO UP VUP1 VVPC VFO VP VVP1 VWPC WFO 11. 12. 13. 14. 15. 16. 17. 18. 19. WP VWP1 VNC VN1 NC UN VN WN Fo 19-s0.5 11.5 27.5 Apr. 2004 MITSUBISHI <INTELLIGENT POWER...