PM75CLB120 Datasheet | Mitsubishi Electric

FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 32%, thickness by 22% from S-DASH series. - 3φ 75A, 1200V Current-sense IGBT type inverter - Monolithic gate drive & protection logic - Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) - Acoustic noise-less 11k W/15k W class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES 120 7 19.75 106 66.5 16 2 2 16 2 16 2 Dimensions in mm 4-φ 4 4 2.5 71.5 Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UFO UP VUP1 VVPC VFO VP VVP1 VWPC WFO 11. 12. 13. 14. 15. 16. 17. 18. 19. WP VWP1 VNC VN1 NC UN VN WN Fo 2 -φ 4 4 4 4 2.5 19.5 22 7.75 23 4 4 23 4 4 23 4 4 98.25 1.5 1 2-φ2.5 1 0.5 2 10.5 27.5 17 16 8.5 Oct. 2003 MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK...