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RA07H3340M - RF MOSFET MODULE 330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO

General Description

The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 330- to 400-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V).
  • Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW.
  • ηT>40% @ Pout=7W (V GG control), VDD=12.5V, Pin=20mW www. DataSheet4U. com 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case).
  • Broadband Frequency Range: 330-400MHz.
  • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V.
  • Module Size: 30 x 10 x 5.4 mm.

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M BLOCK DIAGRAM 2 3 330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum).